Untraditionally doped Cz-grown silicon for power devices (1997)
A new method is developed for n-type, high-resistivity (up to 150 ohm • cm), large-diameter (up to 125 mm), low-cost silicon crystals for power devices such as diodes, thyristors and transistors. The required resistivity’ of silicon is achieved during both crystal growth and power device manufacturing processes. The main properties of UDCz silicon and some parameters of the transistors made from this silicon are presented.