A new method is developed for n-type, high-resistivity (up to 150 ohm • cm), large-diameter (up to 125 mm), low-cost silicon crystals for power devices such as diodes, thyristors and transistors. The required resistivity’ of silicon is achieved during both crystal growth and power device manufacturing processes. The main properties of UDCz silicon and some parameters of the transistors made from this silicon are presented.
Предпросмотр статьи
Идентификаторы и классификаторы
- SCI
- Материаловедение
- Префикс DOI
- DOI: 10.1016/S0022-0248(96)00662-8
- eLIBRARY ID
- 13262785
Библиографическая запись:
Journal of crystal Growth 172 (1997) 120-123
Journal of crystal Growth 172 (1997) 120-123
Journal of crystal Growth 172 (1997) 120-123
Текстовый фрагмент статьи