Рассматривается задача повышения точности и быстродействия систем автоматической фокусировки в оптико-электронных системах (ОЭС). Показано, что применение классических ПИД-регуляторов ограничено нелинейностями приводов и нестационарностью наблюдаемых сцен. Предложена структура адаптивной системы, использующей нечеткую логику для динамической настройки коэффициентов ПИДрегулятора. Обоснован выбор функции оценки контрастности методом Тененграда и аппаратной платформы Orange Pi 6 Plus для реализации алгоритмов в реальном времени. Прогнозируется снижение перерегулирования на 20–30 % и времени переходного процесса на 25–35 % при замене классического ПИД-регулятора на нечёткий.
Создание производственной линии для оперативного освоения технологии «капсулирования» микроболометров в целях обеспечения выпуска необходимых объемов тепловизионных камер
Near-infrared organic photodetectors (NIR-OPDs) are emerging as versatile platforms for flexible and low-cost optical sensing, yet achieving high-performance in the NIR region remains difficult remains challenging due to intrinsic trade-offs at both the material and device levels, due to the inherent balance required among bandgap narrowing, exciton dissociation, charge transport, and dark-current suppression. This review provides a concise overview of OPD operating mechanisms and the performance metrics governing sensitivity and noise. We highlight recent molecular-engineering strategies—core fluorination, asymmetric π-bridge design, fused-ring rigidification, and polymer backbone/side-chain tuning—that effectively enhance intermolecular ordering, reduce energetic disorder, and extend NIR absorption. Progress in all-polymer detectors and ambipolar phototransistors further demonstrates improved stability and broadened detection capability. Additionally, emerging applications, including NIR communication, biosignal monitoring, flexible imaging, and biometric recognition, showcase the expanding utility of NIR-OPDs. Remaining challenges include pushing detection beyond 1200 nm, simplifying synthesis, and improving long-term stability. Overall, advances in low-bandgap molecular design and device engineering continue to accelerate the practical adoption of NIR-OPDs
Данный материал «Управление и наведение самолетов и ракет» написан на основании лекций, читаемых на кафедре «Системы автоматического и интеллектуального управления» МАИ. Материал посвящен системам наведения, управлению с помощью телеуправляемых и самонаводящихся систем. Материал состоит из нескольких частей, здесь представлено содержание первой части. Главы 1, 2 написаны доцентом, к. т. н. Арановичем Г. П. и к. т. н. Михайлиным Д. А.
Изложены принципы построения спутниковой радионавигационной системы ГЛОНАСС. Особое внимание уделено относительным и угловым измерениям на основе глобальных радионавигационных спутниковых систем, методике ориентирования зенитных ракетных, радиолокационных систем и авиационных комплексов перехвата. Представлены результаты исследования погрешностей измерения местоположения подвижных объектов и пространственной ориентации с целью разработки методов их уменьшения, определены направления помехоустойчивости навигационной аппаратуры потребителя спутниковых радионавигационных систем. Предназначена для широкого круга специалистов, занимающихся разработкой, производством и эксплуатацией аппаратуры потребителей спутниковых радионавигационных систем ГЛОНАСС. Может быть полезна студентам, аспирантам и преподавателям высших учебных заведений при изучении дисциплин радиотехнического профиля.
Отечественная разработка и изготовление
The mid-infrared (mid-IR) spectral range is a part of the electromagnetic spectrum in which most of the molecules have vibrational and rotational resonances. Germanium (Ge)-based photonic integrated circuits in this wavelength range have thus seen a burst of interest in the recent years, mainly driven by applications related with the detection of chemical and biological substances. Here we review the motivations and the recent developments in this field, from the different material platforms to active and nonlinear devices. We also discuss a few demonstrations of sensing that have already been conducted, attesting the potential applications of such devices. Finally, we conclude by discussing the challenges that have to be solved to transition from lab demonstrations to practical industrial devices.
Based upon significant latent capacity of antimony-containing avalanche photodetectors in comparison with other materials such as Si or GaInAs in certain applications, the material characteristics beginning from ensemble geometric schematics to respective essential features of binary, ternary, and quaternary antimonides, including their applicability and restrictivity, are analyzed and summarized. Under the scope of the separate-absorption–multiplication avalanche photodetector scheme, the options of absorption and multiplication materials mainly concentrated on the benefit of multiplication and coverage of absorption, as well as recommendation of combinations, including grading choices, are discussed. In conjunction with a simple review of previous efforts, overview and prospects on the development of antimonide APDs are presented. Resulting information is also worthy for other types of antimonide devices.
Photodetectors and image sensors, especially in the infrared wavelength regime, are core components of various optical instruments for medical imaging, remote sensing, night vision, and surveillance, etc. The current commercial infrared photodetectors are mostly based on bulk materials including In1- xGaxAs, InSb, Hg1-xCdxTe, etc. Despite continued advancement and high photoelectrical performance, technological factors limit their widespread usage in next-generation photodetectors, especially, the need for cooling, and the high costs associated with the processing of III-V and II-VI semiconductors. Lowdimensional materials, including zero-dimensional (0D) quantum dots, 1D nanowires, and 2D layered materials, with strong lightmatter coupling coefficient, quantum confinement, and ease of heterostructure construction, are emerged as alternative material platforms for high-performance photodetection technologies at room temperature. This article provides a comprehensive review of the technological evolution, contemporary challenges, and future development trends in infrared detector technologies. First, we systematically analyzed the representative materials and technological features of successive generations of infrared detectors. Then, the discussion focuses on advancements in fourth-generation detector technologies, particularly highlighting breakthroughs in multi-dimensional optical information fusion technology encompassing intensity, polarization, spectral, and phase detection. Finally, drawing on application requirements for neuromorphic vision infrared photodetectors that integrate infrared information acquisition, processing, and intelligent decision-making, the review explores transformative development pathways for next-generation infrared detector technologie
Infrared (IR) sensors are widely used in various applications due to their ability to detect infrared radiation. Currently, infrared detector technology is in its third generation and faces enormous challenges. IR radiation propagation is categorized into distinct transmission windows with the most intriguing aspects of thermal imaging being mid-wave infrared (MWIR) and long-wave infrared (LWIR). Infrared detectors for thermal imaging have many uses in industrial applications, security, search and rescue, surveillance, medical, research, meteorology, climatology, and astronomy. Presently, high-performance infrared imaging technology mostly relies on epitaxially grown structures of the smallbandgap bulk alloy mercury–cadmium–telluride (MCT), indium antimonide (InSb), and GaAs-based quantum well infrared photodetectors (QWIPs), contingent upon the application and wavelength range. Nanostructures and nanomaterials exhibiting appropriate electrical and mechanical properties including two-dimensional materials, graphene, quantum dots (QDs), quantum dot in well (DWELL), and colloidal quantum dot (CQD) will significantly enhance the electronic characteristics of infrared photodetectors, transition metal dichalcogenides, and metal oxides, which are garnering heightened interest.